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Next: Applications---Geochemical Analysis Up: 2. Secondary Ionization Previous: Introduction

Advantages of SIMS

The relatively high ionization probability for many elements during sputtering, combined with localization of the secondary ions either by the use of a focused primary ion beam (ion microprobe) or by a direct ion imaging system (ion microscope), allows measurements of isotope ratios for both major and minor elements in small (nanogram) particles as well as in situ mapping of isotopic and trace element abundances in thin sections or individual grains. While the lateral spatial resolution can be sub-micron for major element mapping, it is more typically in the few to 25 m range for most isotopic and trace element measurements. However, since the vast majority of sputtered ions originate from the instantaneous sample surface (which is continually eroded during analysis), spatial resolution in the vertical dimension can be very good (tens of nm), enabling depth profiling of tracer isotopes or elements in natural samples and experimental run products (e.g., diffusion studies).



U.S. National Report to IUGG, 1991-1994
Rev. Geophys. Vol. 33 Suppl., © 1995 American Geophysical Union